Volume : II, Issue : V, May - 2013

Conductivity Studies of Multilayer Thin Films

Chandra Kumar Dixit, Mohd. Tauqeer

Abstract :

Alzarin dopped gallium arsenide and germanium multilayer thin films of different thickness between 5nm to 25nm were deposited on clean glass substrate at room temperature in a high vacuum of 510 –6 torr. In this paper, we report the preparation of doped GaAs/Ge multilayer thin films using electron beam (e–beam) evaporation technique. The conductivity of the film was determined by measuring the developed between two probe points of four probe systems. It is found that the conductivity decreases with reciprocal temperature and also with film thickness. From the slope of the plot, which is nearly linear throughout the temperature region studied the activation energy was evaluated to be about 400meV. It has been concluded that at lower temperature the conduction is due to hopping of carriers whereas at higher temperature and for thick films band model is prevailing. The ferroelectric algirin provides electron injection into the solid.

Keywords :

Article: Download PDF   DOI : 10.36106/ijsr  

Cite This Article:

Chandra Kumar Dixit, Mohd. Tauqeer Conductivity Studies of Multilayer Thin Films International Journal of Scientific Research, Vol.II, Issue.V May 2013

Number of Downloads : 798

References :