Design and comparison of VCO With Gates Of PMOS Transistors Grounded and VCO With Voltage Applied To Both PMOS And NMOS Transistors of Ring VCO on Variation in Power Consumption and Frequency in 70 nm CMOS technology

Sunil Patidar; Sheetesh Sad

Volume : III, Issue : XI, November - 2014

Design and comparison of VCO With Gates Of PMOS Transistors Grounded and VCO With Voltage Applied To Both PMOS And NMOS Transistors of Ring VCO on Variation in Power Consumption and Frequency in 70 nm CMOS technology

Sunil Patidar, Sheetesh Sad

Abstract :

The proposed work describes the performance evaluation of different types of ring oscillator Voltage Controlled Oscillator topologies on the basis of two characteristic parameters power and frequency in 70 nm CMOS technology. The various topologies analyzed includes Current Starved VCO, VCO with Gates of PMOS Transistor Grounded, VCO with PMOS Diode Connected, VCO with NMOS Diode Connected, VCO with voltage applied to both PMOS and NMOS Transistor. Simulation of different parameters of ring oscillator VCO is carried out on Tanner tool Version 13. VCO topologies are evaluated on the basis of frequency and power consumption by taking lower supply voltage of 1.2 V. Performance evaluation and comparison of different topologies results in minimum power consumption of 0.57 uW by Current Starved VCO topology and maximum operating frequency of 0.57 MHz by VCO with Gates of PMOS Transistor Grounded.