Micro Raman Scattering and GA–XRD Studies of Swift Heavy (200 MeV) Silver Ion Irradiated Gallium Phosphide

M. D. Kirkire; S. K. Dubey

Volume : IV, Issue : VIII, August - 2015

Micro Raman Scattering and GA–XRD Studies of Swift Heavy (200 MeV) Silver Ion Irradiated Gallium Phosphide

M. D. Kirkire, S. K. Dubey

Abstract :

Single crystal gallium phosphide samples were irradiated with 200 MeV Ag9+ ions for various fluences ranging from 1x1012 to 1x1013 ions cm–2. Raman scattering and glancing angle X–ray diffraction techniques were employed in order to study the post irradiation effects. The shift in the Raman scattering peak position with respect to ion fluence indicated the stress in the irradiated sample and phonon confinement of carriers.Amount of stress in the irradiated sample calculated from Raman shift were found to be vary between 297 and 597 MPa. The glancing angle X–ray diffraction study showed increase in the full width at half maxima with increasing ion fluence. Crystallite size evaluated using Scherrer formula wasfound to be vary between 11.30 nm to 5.38 nm for fluence ranging from 1x1012and 1x1013 ions cm–2, respectively