Volume : V, Issue : XI, November - 2016

Resistivity, Hall Coefficient and Carrier concentration of CuInSe2(1x)S2x thin films by spray pyrolysis

Y. D. Tembhurkar

Abstract :

 The I–III–VI2 group semiconductors are of great importance due to their applications in solar cell faication. Spray pyrolysis is a very cheap and inexpensive method of depositing thin films of large area. We have deposited CuInSe2(1–x)S2x on glass substrate at 3500C by varying the proportion parameter x by this method. Resistivity, Hall coefficient and carrier concentration were measured at room temperature by Van–der Pauw Hall method. From these results we conclude that resistivity and Hall coefficient increases as composition parameter x increases. While Hall mobility and carrier concentration decreases as x increases. The resistivity, Hall coefficient and carrier concentration fallow the parabolic variation

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Article: Download PDF   DOI : 10.36106/ijsr  

Cite This Article:

Y. D. Tembhurkar, Resistivity, Hall Coefficient and Carrier concentration of CuInSe2(1x)S2x thin films by spray pyrolysis, International Journal of Scientific Research, Volume : 5 | Issue : 11 | November 2016

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