IJAR - Indian Journal of Applied Research

Kallakunta. Ravi Kumar; Shaik Akbar; Dr.V.Rajesh; G.Chennakesavulu

Volume : III, Issue : VII, July - 2013

A Comparative Study of 6T, 8T and 10T SRAM Cells based on Performance and Word Organization

Kallakunta. Ravi Kumar, Shaik Akbar, Dr. V. Rajesh, G. Chennakesavulu

Abstract :

Now–a–days low power and high stability have been the main theme is designing SRAM, due to this we are moving towards the new technologies. As a result, we are facing new challenges in developing the new technologies. These technologies lead to the implementation of different types of SRAM’s. From the last few decades, the scaling down of CMOS devices have been taking place to achieve better performance in terms of speed, power dissipation, size and reliability. Basically, the performance of the SRAM cell is measured based on Static Noise Margin and Write Trip Point. The stability of SRAM cell also depends on Static Noise Margin and Write Trip Point. In this paper, the comparison of 6T, 8T and 10T SRAM cells has done on the basis of Static Noise Margin, Write Trip Point and SRAM word organization.