Volume : III, Issue : III, March - 2013

Au/ MEH: Alq3/ITO Donor–Acceptor Blend as a Schottky Diode

Mahdi Hasan Suhail, Issam Muhammad Ibrahim

Abstract :

In this research, we investigated the metal contacts using 100 nm thick film MEH:Alq3 which is deposited onto an indium tin oxide (ITO) substrate as a test device. Electrical hysteresis phenomena were observed in the current–voltage characteristics of the device. The diode parameters such as ideality factor, series resistance, shunt resistance and barrier height are measured.

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Article: Download PDF   DOI : 10.36106/ijar  

Cite This Article:

Mahdi Hasan Suhail, Issam Muhammad Ibrahim Au/ MEH: Alq3/ITO Donor-Acceptor Blend as a Schottky Diode Indian Journal of Applied Research, Vol.III, Issue.III March 2013

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