Volume : IV, Issue : VIII, August - 2014

Comparison Among Gaas and Sic: Energy Dispersion Study

S. Krishnaveni, S. Ravi

Abstract :

This paper compares the characteristics of SiC and GaAs with respect to physical parameters. There are number of factors that contribute to the reliability of SiC – wide band gap. Typical features include high power, high frequency, high thermal conductivity and higher doping concentration, small depletion width results in reduction of specific “on” resistance. These properties equip SiC with high eakdown voltage and higher efficiency. A comparative study of typical properties of SiC and GaAs is done and it is observed that SiC is superior.

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Article: Download PDF   DOI : 10.36106/ijar  

Cite This Article:

S. Krishnaveni, S.Ravi Comparison Among Gaas and Sic: Energy Dispersion Study Indian Journal of Applied Research, Vol.4, Issue.8 August 2014

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