Volume : VII, Issue : V, May - 2017
Design and Implementation of High–performance Logic Arithmetic Full Adder Circuit based on FinFET Technology – Shorted Gate Mode
Sarita Chauhan, Mamta Kasotiya, Nishi Chouhan, Sheetal Mundra, Shivangiagarwal
Abstract :
Fin–type field–effect transistors (FinFETs) are promising substitutes for bulk CMOS at the Nano scale. FinFETs are double gate and multi–gate devices. Double–gate (DG) FinFETs has better Short Channels Effects (SCEs) performance compared to the conventional CMOS and stimulates technology scaling. The two gates of a FinFET can either be shorted for higher performance or independently controlled for lower leakage or reduced transistor count. In this paper, we are designing a Double–gate (DG) FinFETs and extracting their transfer characteristics by using Synopsys TANNER–EDA simulation tool. Full Adder is implemented in CMOS with technology and FinFET–shorted gate mode with technology along with its working waveform and performance analysis. TANNER–EDA simulations are carried out for the design and results are analyzed.
Keywords :
Double–gate FinFET (DG FinFET) Multi–gate (MG) Short channel effects (SCE) Shorted–Gate Mode (SG–Mode) Drain Induced Barrier Lowering (DIBL) Full Adder.
Article:
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DOI : 10.36106/ijar
Cite This Article:
Sarita Chauhan, Mamta kasotiya, Nishi chouhan, Sheetal Mundra, ShivangiAgarwal, Design and Implementation of High–performance Logic Arithmetic Full Adder Circuit based on FinFET Technology – Shorted Gate Mode, INDIAN JOURNAL OF APPLIED RESEARCH : Volume‾7 | Issue‾5 | May‾2017
Number of Downloads : 610
Sarita Chauhan, Mamta kasotiya, Nishi chouhan, Sheetal Mundra, ShivangiAgarwal, Design and Implementation of High–performance Logic Arithmetic Full Adder Circuit based on FinFET Technology – Shorted Gate Mode, INDIAN JOURNAL OF APPLIED RESEARCH : Volume‾7 | Issue‾5 | May‾2017
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