Effect of Annealing and Deposition Temperature on  Structural Properties of Cdte Thin Films Prepared by  Thermal Evaporation Method

Mustafa Hussein; Manal  Abdullah; Ghuson Mohammed

Volume : III, Issue : II, February - 2013

Effect of Annealing and Deposition Temperature on Structural Properties of Cdte Thin Films Prepared by Thermal Evaporation Method

Mustafa Hussein, Manal Abdullah, Ghuson Mohammed

Abstract :

CdTe thin films are deposited at room temperature on both glass and p–type silicon wafer with different thicknesses by Thermal Evaporation technique. The thickness of films is set to be 100, 300, 500, and 700nm measured by Crystal Quartz method. The effect of the substrate temperatures (Ts= 100, 200, and 300°C) on the structural properties of films is studied by Ellipsometer. The results show decreasing in the adhesion force between thin film and substrate when Ts is increased especially for thicker films. For as deposited films, samples are annealed in air for one hour at annealing temperatures (Ta=100, 150, 200, 300, 400, and 500°C). It is found that for low thickness of CdTe layer in the range between (100 and 500nm), the best results are found at (Ta=300C) as shown by XRD patterns and surface profilometer images. Also we get best results for samples with thickness of 700nm and temperature annealing at 100oC. While at (Ta=500°C), the crystalline form of the samples is damaged.