Volume : III, Issue : V, May - 2013

Electrical and Optical Properties Dependence on Annealing Temperature for CdS Thin Films

F. Y. Al Shaikley

Abstract :

Thin films of 100±10nm thickness CdS were deposited onto glass substrate maintained at room temperature using thermal evaporation technique. The effect of annealing temperature on the electrical and some optical properties were investigated. The annealing process in air for 1h was found to decrease the optical band gap energy and to increase the conductivity and Hall mobility of the investigated thin films. The optical band gap values were varied between 2.4 and 2.3eV with allowed direct transition. Urbach energy was found to be deceased for air–annealed films up to 623K then it increased with further elevation in annealing temperatures up to 723K. On annealing process, the dark DC electrical conductivity at room temperature and Hall mobility of the films increased from 1.67×10–6 to 3.93×10–4 (Ω.cm)–1 and from 0.31 to 42.35cm2 /V.s respectively .These physical behavior make prepared films good candidate for solar cells faication. All the investigated films have n–type conduction with their carrier concentration were to be in the order of 1013cm–3 .The activation energy as a function of the annealing temperature was found to be in the range 0.776–0.375eV

Keywords :

Article: Download PDF   DOI : 10.36106/ijar  

Cite This Article:

F. Y. Al-Shaikley Electrical and Optical Properties Dependence on Annealing Temperature for CdS Thin Films Indian Journal of Applied Research, Vol.III, Issue.V May 2013

Number of Downloads : 765

References :