Volume : VIII, Issue : III, March - 2018

Electrical properties of Niobium Diselenide single crystals

Duhita Lakhataria, Rajiv D. Vaidya, Kaushik R. Patel

Abstract :

 

A study of structural, optical, electrical and superconducting properties of the layered compounds of the group II–VI have aroused a widespread interest and attention of the material scientists all over the world during the last few decades. Currently, the growth of super conducting material NbSe₂ single crystals was grown by chemical vapour transport technique.  The electrical resistivity parallel and perpendicular to the growth axis were measured at high temperature. In temperature range 303 K to 423 K, the resistivity, both normal as well as along the basal plane are decreases with increase in the temperature. But beyond 423 K temperature the resistivity parallel to growth axis was increase with increasing temperature. The activation energy and anisotropy measurements have been carried out for grown crystal. The variation of electrical resistance was monitored in a Bridgman opposed anvils setup up to 8 GPa pressure to identify occurrence of any structural transition. These crystals do not possess any structural transitions up to pressure limit examined.

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Article: Download PDF   DOI : 10.36106/ijar  

Cite This Article:

Duhita Lakhataria, Rajiv D. Vaidya, Kaushik R. Patel, Electrical properties of Niobium Diselenide single crystals, INDIAN JOURNAL OF APPLIED RESEARCH : Volume-8 | Issue-3 | March-2018

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