Volume : III, Issue : III, March - 2013

Fabrication of Silicon PIN Photodiode for Nd+3–YAG Laser Detection

Baha A M Al Hilli, Mohammed Khalaf, Kadhim Aadim, Ghuson Mohammed

Abstract :

Faication of Si PIN photodiode has been carried out, and optimized for optical wavelength of 1.06 µm. It is found that the photodiode has three layers (n+–π–p+) structure with deep junction faicated on large diameter wafer of 1 mm thick, and high resistivity (ρ≥600 Ω.cm) as a starting material using a thermal diffusion method. Details of the faication processes have been presented and the performance parameters were given. It has been found that the peak spectral response of about 1.5 A/W occurred at wavelength of 1.06 µm and the photodiode was operated at a high reverse bias range 170–180 volt. Also, the response time was measured and found that the photodiode has a short response time equal to τ =85 ns.

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Article: Download PDF   DOI : 10.36106/ijar  

Cite This Article:

Baha�a M Al-Hilli,Mohammed Khalaf,Kadhim Aadim,Ghuson Mohammed Fabrication of Silicon PIN Photodiode for Nd+3-YAG Laser Detection Indian Journal of Applied Research, Vol.III, Issue.III March 2013

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