Volume : IV, Issue : II, February - 2014

I–V and C–V characteristics of ZnSe1–x AL x / n and p–Si Solar Cell

Akram Nouri Al Mashhadani, Issam Mohammad Ibrahim, Duaa Ali. Hashim

Abstract :

ZnSe1-x Alx ( where x %=0, 2, 4,6 and 8) thin films were prepared by using a vacuum evaporation technique under a vacuum of 5*10-4 mbar. The structure and Optical properties of the ZnSe thin films were studied by using X-ray diffraction and were measured I-V, and C-V characteristics. X- ray diffraction shows that prepared films are polycrystalline with preferred (111) orientation and having a zinc blend cubic structure (2θ=27.35) at (x=0, 2 and 4%), but at high concentration and annealing at 373K appeared new bond leads to Al2Se3. It was found that optical band gap, Eg, decreases on dopping Al. The values changes from 2.85 eV (for ZnSe) to 1.99eV with Al concentration increase. The current-voltage characteristics of ZnSe1-x Alx/Si heterojunction show that the solar cell which is produced at all aluminum concentrations. ZnSe1-xAlx/Si heterojunction has been prepared at different concentrations of (x). The reverse bias capacitance was measured as a function of bias voltage.

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Article: Download PDF   DOI : 10.36106/ijar  

Cite This Article:

Akram Nouri al-Mashhadani, Issam Mohammad Ibrahim, Duaa Ali. Hashim I-V and C-V characteristics of ZnSe1-x AL x/ n and p-Si Solar Cell Indian Journal of Applied Research, Vol.IV, Issue. II


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