Volume : III, Issue : VI, June - 2013

Synthesis and Characterisation of Ta2o5 Thin Films For Microelectronics Application

Kanta Rathee, B P Malik

Abstract :

Amorphous tantalum oxide thin flims were deposited by reactive sputtering of tantalum target onto silicon substrates. Oxygen flow rate has been varied to obtain thin flims with different densities. The thin flims were analysed by X–RAY diffraction and atomic force microscopy ( AFM ). We present the data of deposition rate and refractive index of amorphous tantalum oxide as a function of oxygen flow rate. Also the C–V characterstics of the as deposited amorphous tantalum oxide is compared with that of annealed tantalum oxide flim. The I–V measurements are taken by I–V model set and the value of leakage current is found to vary in the range [6.0 *10–4 A– 2.3 * 10–4 A] for corresponding values of electric feild density [0–4 MV /cm] in case of as deposited flim, whereas it ranges from [4.8*10–4 – 1.8*10–4 A ]in case of annealed flim for similar range of electric field density

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Article: Download PDF   DOI : 10.36106/ijar  

Cite This Article:

Kanta Rathee, B P Malik Synthesis and Characterisation of Ta2o5 Thin Films For Microelectronics Application Indian Journal of Applied Research, Vol.III, Issue.VI June 2013

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