Synthesis and Characterization of Nanocrystalline Chalcogenide Cus Thin Films

S. Lakshmi Rangaiah; G. Sudhakar; S.Obedulla  Sharif; M.Jaheer Ahmed; G. Mahaboob basha; T. Subba Rao

Volume : IV, Issue : V, May - 2014

Synthesis and Characterization of Nanocrystalline Chalcogenide Cus Thin Films

S. Lakshmi Rangaiah, G. Sudhakar, S. Obedulla Sharif, M. Jaheer Ahmed, G. Mahaboob Basha, T. Subba Rao

Abstract :

ZnTe is an II–VI compound semiconductor with a direct band gap of 2.26 eV at room temperature. It has very potential applications in solid state devices such as solar cell, Photo–detectors, light emitting diodes, Photo– electrochemical solar cells, optoelectronic devices, high efficiency multi–junction solar cells, terahertz (THz) devices and switching devices. It exhibits low electron affinity (3.53 eV). It crystallizes in Zinc blends structure with lattice constant of 6.1037 A0 and melting point of 12950C. Thin films of ZnTe were prepared by thermal evaporation technique. XRD studies are used to characterize the structure of semi conductor thin films and to confirm the compound formation and unit cell parameters, crystallite site etc. SEM photos reveal the microstructure of the thin films, and are widely used for the estimation of grain size, gain boundaries, stress, strain, dislocation density etc. The effect of substrate on the structure of these films is clearly seen from the XRD data. ZnTe is potentially low cost, environmentally stable, low resistance and easily manufacturability back contact semiconducting material. The detailed information is presented in the paper.